IndiumV3, Main, Repository, bibRecord, 001492

Structure and strain state of polar and semipolar InGaN quantum dots

Identifieur interne : 001492 ( Main/Repository ); précédent : 001491; suivant : 001493

Structure and strain state of polar and semipolar InGaN quantum dots

Auteurs : RBID : Pascal:13-0081524

Descripteurs français

Pascal (Inist)
- Déformation mécanique, Composé minéral, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Semiconducteur, Point quantique, Autoassemblage, Superréseau, Croissance film, Epitaxie jet moléculaire, Microscopie électronique transmission, Dépendance température, Défaut empilement, Analyse phase, Indium, 6865H, 8107T.
Wicri :
- concept : Composé minéral.

English descriptors

KwdEn :
- Film growth, Gallium nitride, Indium, Indium nitride, Inorganic compounds, Molecular beam epitaxy, Phase analysis, Quantum dots, Self-assembly, Semiconductor materials, Stacking faults, Strains, Superlattices, Temperature dependence, Ternary compounds, Transmission electron microscopy.

Abstract

The nanoscale structural properties of ultrathin (2nm high) self-assembled (0001) polar and (1122) semipolar InGaN/GaN quantum dot (QD) superlattices, grown by plasma-assisted molecular beam epitaxy, were investigated using transmission electron microscopy (TEM) techniques. Samples grown under two sets of temperature ranges were compared. The higher-temperature uncapped polar QDs were well-defined and exhibited a truncated pyramidal morphology. Similar morphology was observed for the embedded QDs, albeit faintly diffused. On the other hand, the polar superlattices grown at lower tem- peratures were heavily distorted due to a large stacking fault density. Semipolar QDs exhibited lenticular morphology. The QD superlattices were found to be elastically strained using geometrical phase analysis, and their strain state was well-described by a biaxial approximation. The extrapolated indium content was consistent with reduced indium incorporation efficiency for the semipolar case compared with the polar one.

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Pascal:13-0081524

Le document en format XML

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<term>Indium nitride</term>
<term>Inorganic compounds</term>
<term>Molecular beam epitaxy</term>
<term>Phase analysis</term>
<term>Quantum dots</term>
<term>Self-assembly</term>
<term>Semiconductor materials</term>
<term>Stacking faults</term>
<term>Strains</term>
<term>Superlattices</term>
<term>Temperature dependence</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Déformation mécanique</term>
<term>Composé minéral</term>
<term>Composé ternaire</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Semiconducteur</term>
<term>Point quantique</term>
<term>Autoassemblage</term>
<term>Superréseau</term>
<term>Croissance film</term>
<term>Epitaxie jet moléculaire</term>
<term>Microscopie électronique transmission</term>
<term>Dépendance température</term>
<term>Défaut empilement</term>
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<front><div type="abstract" xml:lang="en">The nanoscale structural properties of ultrathin (2nm high) self-assembled (0001) polar and (1122) semipolar InGaN/GaN quantum dot (QD) superlattices, grown by plasma-assisted molecular beam epitaxy, were investigated using transmission electron microscopy (TEM) techniques. Samples grown under two sets of temperature ranges were compared. The higher-temperature uncapped polar QDs were well-defined and exhibited a truncated pyramidal morphology. Similar morphology was observed for the embedded QDs, albeit faintly diffused. On the other hand, the polar superlattices grown at lower tem- peratures were heavily distorted due to a large stacking fault density. Semipolar QDs exhibited lenticular morphology. The QD superlattices were found to be elastically strained using geometrical phase analysis, and their strain state was well-described by a biaxial approximation. The extrapolated indium content was consistent with reduced indium incorporation efficiency for the semipolar case compared with the polar one.</div>
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<s2>NC</s2>
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<fC03 i1="17" i2="3" l="FRE"><s0>6865H</s0>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>Stress, structure, and stoichiometry effects on the properties of nanomaterials Symposium</s1>
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   |texte=   Structure and strain state of polar and semipolar InGaN quantum dots
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Structure and strain state of polar and semipolar InGaN quantum dots

Structure and strain state of polar and semipolar InGaN quantum dots

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